? semiconductor components industries, llc, 2005 july, 2005 ? rev. 3 1 publication order number: ss12/d ss12, SS14 surface mount schottky power rectifier sma power surface mount package these devices employ the schottky barrier principle in a large area metal?to?silicon power diode. state of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system. features ? small compact surface mountable package with j?bent leads ? rectangular package for automated handling ? highly stable oxide passivated junction ? guardring for stress protection ? pb?free packages are available mechanical characteristics ? case: epoxy, molded ? epoxy meets ul 94 v?0 @ 0.125 in ? weight: 70 mg (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead and mounting surface temperature for soldering purposes: 260 c max. for 10 seconds ? shipped in 12 mm tape, 5000 units per 13 inch reel ? polarity: cathode lead indicated by polarity band ? device meets msl 1 requirements ? esd ratings: human body model, 3b (> 8000 v) machine model, b (> 200 v) device package shipping ? ordering information ss12t3 sma 5000/tape & ree l schottky barrier rectifier 1.0 amperes 20, 40 volts marking diagram sma case 403d plastic http://onsemi.com SS14t3 sma 5000/tape & ree l ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specification s brochure, brd8011/d. ss1x = specific device code x = 2 or 4 a = assembly location y = year ww = work week = pb?free package ss1x ayww ss12t3g sma (pb?free) 5000/tape & ree l SS14t3g sma (pb?free) 5000/tape & ree l www.datasheet.co.kr datasheet pdf - http://www..net/
ss12, SS14 http://onsemi.com 2 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage ss12 SS14 v rrm v rwm v r 20 40 v average rectified forward current (at rated v r , t c = 120 c) i o 1.0 a peak repetitive forward current (at rated v r , square wave, 20 khz, t c = 120 c) i frm 2.0 a non?repetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 60 a storage/operating case temperature t stg , t c ?55 to +150 c operating junction temperature t j ?55 to +150 c voltage rate of change (rated v r , t j = 25 c) dv/dt 10,000 v/ s maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual str ess limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation i s not implied, damage may occur and reliability may be affected. thermal characteristics characteristic symbol value unit thermal resistance, junction?to?lead (note 1) thermal resistance, junction?to?ambient (note 1) r jl r ja 35 86 c/w electrical characteristics maximum instantaneous forward voltage (note 2) see figure 2for other values (i f = 1.0 a) v f t j = 25 c v 0.47 maximum instantaneous reverse current see figure 4 for other values (v r = 20 v) (v r = 40 v) i r t j = 25 c t j = 100 c ma 0.045 0.1 2.0 5.0 1. mounted on 2 in square pc board with 1 in square total pad size, pc board fr4. 2. pulse test: pulse width 250 s, duty cycle 2.0%. 0.1 1 10 0.10 0.30 0.50 0.70 0.90 i f , instantaneous forward current (a) v f , instantaneous forward voltage (v) figure 1. typical forward voltage t j = 150 c t j = 100 c t j = ?55 c t j = 25 c 0.1 1 10 0.10 0.30 0.50 0.70 0.90 t j = ?55 c t j = 25 c t j = 150 c t j = 100 c i f , instantaneous forward current (a) v f , maximum forward voltage (v) figure 2. maximum forward voltage www.datasheet.co.kr datasheet pdf - http://www..net/
ss12, SS14 http://onsemi.com 3 1e?6 10e?6 100e?6 1e?3 10e?3 100e?3 0 10203040 t j = 100 c t j = 150 c t j = 25 c i r , reverse current (a) v r , instantaneous forward voltage (v) figure 3. typical reverse current 1e?6 10e?6 100e?6 1e?3 10e?3 100e?3 01020304 0 i r , maximum reverse current (a) v r , reverse voltage (v) figure 4. maximum reverse current t j = 100 c t j = 150 c t j = 25 c 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 25 45 65 85 105 125 145 i o , average forward current (a) t l , lead temperature ( c) figure 5. current derating dc square wave i pk /i o = p i pk /i o = 5 i pk /i o = 10 i pk /i o = 20 freq = 20 khz 0 0.05 0.1 0.15 0.2 0.25 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1 .8 p fo , average power dissipa- tion (w) i o , average forward current (a) figure 6. forward power dissipation dc square wave i pk /i o = p i pk /i o = 5 i pk /i o = 10 i pk /i o = 20 10 100 1000 0 5 10 15 20 25 30 35 40 45 v r , reverse voltage (v) figure 7. capacitance t j = 100 c c, capacitance (pf) 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 t, time (sec) figure 8. thermal response d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.01 single pulse p (pk) duty cycle, d = t 1 /t 2 t 1 t 2 r (t) , transient thermal resistance test type > min pad theta jc = min pad 1 oz c/w www.datasheet.co.kr datasheet pdf - http://www..net/
ss12, SS14 http://onsemi.com 4 package dimensions sma case 403d?02 issue c 4.0 0.157 2.0 0.0787 2.0 0.0787 mm inches scale 8:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* dim a min nom max min millimeters 1.91 2.16 2.41 0.075 inches a1 0.05 0.10 0.15 0.002 b 1.27 1.45 1.63 0.050 c 0.15 0.28 0.41 0.006 d 2.29 2.60 2.92 0.090 e 4.06 4.32 4.57 0.160 l 0.76 1.14 1.52 0.030 0.085 0.095 0.004 0.006 0.057 0.064 0.011 0.016 0.103 0.115 0.170 0.180 0.045 0.060 nom max 4.83 5.21 5.59 0.190 0.205 0.220 h e e bd l c a a1 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 403d?01 obsolete, new standard is 403d?02. polarity indicator optional as needed (see styles) h e style 1: pin 1. cathode (polarity band) 2. anode on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 ss12/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative. www.datasheet.co.kr datasheet pdf - http://www..net/
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